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6MBI50UA-120
IGBT Module U-Series
Features
* High speed switching * Voltage drive * Low inductance module structure
1200V / 50A 6 in one-package
Applications
* Uninterruptible power supply * Inverter for Motor drive * AC and DC Servo drive amplifier * Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 75 50 150 100 50 100 275 +150 -40 to +125 2500 3.5 Unit V V A
Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C
Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 between thermistor and others *2 Screw Torque Mounting *3
1 device
W C VAC N*m
AC:1min.
*1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N*m(M5)
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=50mA Tj=25C VGE=15V, IC=50A Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=50A VGE=15V RG=22 VGE=0V IF=50A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.00 - 2.25 - 1.75 - 2.00 - 6 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.85 - 1.95 - 1.60 - 1.70 - - - 4.1 - 5000 465 495 3305 3375 Unit Max. 1.0 200 8.5 2.35 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.15 - 1.90 - 0.35 - - 520 3450 mA nA V V
Inverter
Input capacitance Turn-on time
nF s
Turn-off time Forward on voltage
V
Thermistor
Reverse recovery time Lead resistance, terminal-chip*4 Resistance
IF=50A T=25C T=100C T=25/50C
s m
B value B *4:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.05 Unit Max. 0.45 0.73 - C/W C/W C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
6MBI50UA-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
125 VGE=20V 15V 12V Collector current : Ic [A] 125 VGE=20V 15V
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
100 Collector current : Ic [A]
100
12V
75 10V
75
50
50
10V
25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
125 T j=25C T j=125C 10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
100 Collector current : Ic [A]
Collector - Emitter voltage : VCE [ V ]
8
75
6
50
4
25
2
Ic=100A Ic=50A Ic= 25A
0 0 1 2 3 4 5
0 5 10 15 20 25
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25C
100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
Dynamic Gate charge (typ.) Vcc=600V, Ic=50A, Tj= 25C
Capacitance : Cies, Coes, Cres [ nF ]
VGE
10.0
Cies
1.0
Cres
Coes 0.1 0 10 20 30
VCE 0 0 100 200 300
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
6MBI50UA-120
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=22, Tj= 25C
10000 10000
IGBT Module
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=22, Tj=125C
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
1000 ton toff tr 100 tf
1000 toff ton tr 100
tf
10 0 25 50 75 100
10 0 25 50 75 100
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=50A, VGE=15V, Tj= 25C
10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=22
Eoff(125C) Eon(125C) 8
Switching time : ton, tr, toff, tf [ nsec ]
ton toff 1000
6
Eoff(25C) Eon(25C)
tr 100 tf
4 Err(125C) 2 Err(25C)
10 10 100 1000
0 0 25 50 75 100
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=50A, VGE=15V, Tj= 125C
50 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 125
Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 22 ,Tj <= 125C
40
30
Collector current : Ic [ A ] 1000
Eon
100
75
20 Eoff 10 Err 0 10 100
50
25
0 0 400 800 1200
6MBI50UA-120
IGBT Module
Forward current vs. Forward on voltage (typ.) chip
125 1000
Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=22
T j=125C 75
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
100 Forward current : IF [ A ]
T j=25C
trr (125C) trr (25C) 100 Irr (125C) Irr (25C)
50
25
0 0 1 2 3 4 Forward on voltage : VF [ V ]
10 0 25 50 75 100 Forward current : IF [ A ]
Transient thermal resistance (max.)
1.00
FWD
Temperature characteristic (typ.)
100
Thermal resistanse : Rth(j-c) [ C/W ]
IGBT
Resistance : R [ k ] 0.010 0.100 1.000
10
0.10
1
0.01 0.001
0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T emperature [C ] Pulse width : Pw [ sec ]
6MBI50UA-120
Outline Drawings, mm M636
IGBT Module
(
) shows reference dimension.
Equivalent Circuit Schematic
25,26
15,16
17
18
1 2 U 23,24 3 4 27,28
5 6 V 21,22 7 8
9 10 W 19,20 11 12 13,14

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